Samsung DDR delivers the performance, capacity, and reliability needed to power diverse computing environments.
From the demanding thermal and durability requirements of industrial systems to the rigorous performance requirements of enterprise infrastructures, our solutions are engineered to meet strict industry standards. The DDR family enables smooth data processing, dependable operation, and scalable configurations that maintain stable performance as workloads rapidly grow.
Samsung DDR delivers the performance, capacity, and reliability needed to power diverse computing environments. From the demanding thermal and durability requirements of industrial systems to the rigorous performance requirements of enterprise infrastructures, our solutions are engineered to meet strict industry standards. The DDR family enables smooth data processing, dependable operation, and scalable configurations that maintain stable performance as workloads rapidly grow.
Samsung DDR delivers the performance, capacity, and reliability needed to power diverse computing environments. From the demanding thermal and durability requirements of industrial systems to the rigorous performance requirements of enterprise infrastructures, our solutions are engineered to meet strict industry standards. The DDR family enables smooth data processing, dependable operation, and scalable configurations that maintain stable performance as workloads rapidly grow.
up to 32Gb
up to 7,200 Mbps
1.1V
0 °C to 85 °C, -40 °C to 95 °C
x16, x8
106 FBGA, 102 FBGA, 82 FBGA, 78 FBGA
up to 32Gb
up to 3,200 Mbps
1.2V
0 °C to 85 °C, -40 °C to 95 °C
x16, x8, x4
96 FBGA, 78 FBGA
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All product specifications reflect internal test results and are subject to variations by the user's system configuration
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For further details on product specifications, please contact the sales representative of your region.
DDR stands for Double Data Rate.
It is a type of DRAM that sends data twice during one clock cycle.
A “clock” in digital systems is like a repeating beat that tells the memory when to send or receive data.
Each beat has an “up” movement (rising edge) and a “down” movement (falling edge).
Older memory sent data only on one of these edges, but DDR sends data on both.
This means DDR can transfer data twice per cycle without increasing the clock speed itself.
Inside DDR memory, data is stored in DRAM cells made of one transistor and one capacitor,
and the memory controller coordinates read and write operations in sync with the clock.
Because it uses both edges of the clock, DDR provides much higher bandwidth for modern systems.
DDR stands for Double Data Rate.
It is a type of DRAM that sends data twice during one clock cycle.
A “clock” in digital systems is like a repeating beat
that tells the memory when to send or receive data.
Each beat has an “up” movement (rising edge)
and a “down” movement (falling edge).
Older memory sent data only on one of these edges,
but DDR sends data on both. This means DDR can transfer data
twice per cycle without increasing the clock speed itself.
Inside DDR memory, data is stored in DRAM cells
made of one transistor and one capacitor,
and the memory controller coordinates
read and write operations in sync with the clock.
Because it uses both edges of the clock,
DDR provides much higher bandwidth for modern systems.
DDR stands for Double Data Rate. It is a type of DRAM that sends data twice during one clock cycle.
A “clock” in digital systems is like a repeating beat that tells the memory when to send or receive data. Each beat has an “up” movement (rising edge) and a “down” movement (falling edge).
Older memory sent data only on one of these edges, but DDR sends data on both. This means DDR can transfer data twice per cycle without increasing the clock speed itself.
Inside DDR memory, data is stored in DRAM cells made of one transistor and one capacitor, and the memory controller coordinates read and write operations in sync with the clock. Because it uses both edges of the clock, DDR provides much higher bandwidth for modern systems.
Different DDR generations, such as DDR4 and DDR5, cannot be mixed because they use different slot designs,
signaling methods, and electrical characteristics, making them incompatible with each other.
For memory modules within the same DDR generation but with different speeds, they can be mixed,
but all modules will operate at the speed of the slowest one. This is because the memory controller must choose
a common timing and frequency that every module can reliably support.
If it attempted to run at a higher speed than one module can handle, the system would become unstable or fail to boot.
Different DDR generations, such as DDR4 and DDR5, cannot be mixed
because they use different slot designs, signaling methods,
and electrical characteristics, making them incompatible with each other.
For memory modules within the same DDR generation but with different speeds,
they can be mixed, but all modules will operate at the speed of the slowest one.
This is because the memory controller must choose a common timing
and frequency that every module can reliably support.
If it attempted to run at a higher speed than one module can handle,
the system would become unstable or fail to boot.
Different DDR generations, such as DDR4 and DDR5, cannot be mixed because they use different slot designs, signaling methods, and electrical characteristics, making them incompatible with each other.
For memory modules within the same DDR generation but with different speeds, they can be mixed, but all modules will operate at the speed of the slowest one. This is because the memory controller must choose a common timing and frequency that every module can reliably support.
If it attempted to run at a higher speed than one module can handle, the system would become unstable or fail to boot.
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Test results do not guarantee future performance under such test conditions, and the actual throughput or performance that any user will experience may vary depending upon many factors.
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