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A collage of historical photographs documenting key milestones and moments in Samsung’s semiconductor development journey.
Continuing our journey of relentless innovation Continuing our journey of relentless innovation

Continuing our journey of relentless innovation

From humble beginnings
to a global semiconductor powerhouse,
our journey has been defined
by bold challenges and continuous innovation. From humble beginnings to a global
semiconductor powerhouse,
our journey has been defined
by bold challenges and continuous innovation. From humble beginnings to a global semiconductor powerhouse,
our journey has been defined by bold challenges and continuous innovation.

Shaping
the future 2010-Recent

Pushing the boundaries of technology and driving change across industries, we are preparing for the next leap forward.
  • Develops the industry's first 12-stack 36GB HBM3E
  • Develops the industry's first 24Gb GDDR7 DRAM
  • Begins the world's first mass production of the 9th-generation V-NAND
  • Opens High Performance Computing (HPC) Center in Hwaseong, Korea
  • Completes validation of Life Cycle Assessment (LCA) for semiconductor carbon emissions
  • Receives Platinum Certification from the Alliance for Water Stewardship (AWS)
  • Begins the world's first mass production of 12nm-class DRAM
  • Launches ISOCELL HP2, a 200MP image sensor
  • Develops the industry's first 12nm-class 32Gb DDR5
  • Breaks ground on new semiconductor R&D complex in Giheung, Korea
  • Launches ISOCELL HP3, a 200MP image sensor
  • Begins the world's first mass production of 3nm process-based GAA foundry
  • Begins mass production of the 8th-generation 236-layer V-NAND
  • Develops 12nm 16Gb DDR5
  • Develops the industry's first AI memory semiconductor
  • Obtains carbon, water, and waste reduction certifications for all global semiconductor sites
  • Unveils 200-megapixel ISOCELL HP1
  • Begins the industry's first commercialization of 14nm DRAM
  • Develops the industry's first LPDDR5X
  • Begins mass production of high-performance memory solutions for next-generation vehicles
  • Announces new advanced semiconductor fab investment in Taylor, USA
  • Begins production in Line 2 of Pyeongtaek, Korea
  • Develops the world's first 3nm microfabrication technology
  • Begins operation of V1 Line for EUV in Hwaseong, Korea
  • Becomes the industry's first to apply EUV processing to DRAM production
  • Becomes the industry's first to apply 3D stacking technology to EUV system semiconductors
  • Starts the industry's first mass production of 1TB eUFS
  • Develops the industry's first third-generation 10nm-class DRAM
  • Unveils the industry's first 64MP mobile image sensor
  • Begins the world's first mass production of the 6th-generation V-NAND SSD
  • Develops the industry's first 12-layer 3D-TSV packaging technology
  • Breaks ground on the EUV line in Hwaseong, Korea
  • Breaks ground on the second memory line in Xi’an, China
  • Begins mass production of 5th-generation V-NAND
  • Develops the industry’s first 8Gb LPDDR5
  • Develops Samsung’s first 5G modem, Exynos Modem 5100
  • Launches automotive solution brands, Exynos Auto and ISOCELL Auto
  • Begins production of EUV-based 7nm LPP
  • Begins production in Pyeongtaek, Korea
  • Launches Foundry business division
  • Begins mass production of 2nd-generation 10nm FinFET process
  • Starts the industry’s first mass production of 10nm FinFET SoCs
  • Starts the industry’s first mass production of 10nm-class DRAM
  • Begins production in Line 17
  • Starts the industry’s first mass production of 14nm FinFET mobile APs
  • Starts the industry’s first mass production of 20nm-class 8Gb mobile DRAM (LPDDR4)
  • Begins production in Xi’an, China (SCS)
  • Starts the industry’s first mass production of 3D Vertical NAND (V-NAND) memory
  • Introduces Exynos 5 Octa, the industry’s first mobile AP with big.LITTLE™ architecture
  • Starts the industry's first mass production of 30nm-class 4Gb mobile DRAM (LPDDR2)
  • Launches branded application processor, Exynos
  • Develops the industry’s first 32nm HKMG process
  • Starts the industry's first mass production of 20nm-class NAND flash

Continuing
the
legacy 2000-2009

Achieved groundbreaking technological milestones and solidified a position as a global leader.
  • Starts mass production of 40nm-class 2Gb DRAM
  • Begins production in Line 2 of Austin, USA (SAS)
  • Develops the industry’s first 16-chip MCP
  • Introduces the industry’s first 32GB SSDs
  • Develops the industry’s first DDR3 SDRAM
  • Develops the industry’s first 60nm-class 8Gb NAND flash
  • Achieves top market share in flash memory
  • Achieves top market share in LCD Driver ICs
  • Develops the industry’s first 90nm-class 2Gb NAND flash
  • Breaks ground on campus in Hwaseong, Korea

Taking
center stage 1990-1999

With the launch of the first 64Mb DRAM, a new era of innovation began.
  • Starts shipping the industry’s first 128Mb flash memory
  • Begins production in Austin, USA (SAS)
  • Launches System LSI business division
  • Develops the industry’s first 1Gb DRAM
  • Develops the industry’s first 256Mb DRAM
  • Opens the industry’s first 200mm fabrication line (Line 5)
  • Achieves the world’s top memory market share
  • Develops the industry’s first 64Mb DRAM
  • Achieves the world’s top DRAM market share

Making history
from the very first step 1980-1989

Strategic investment and forward-thinking laid the foundation for innovation.
  • Develops 4Mb DRAM
  • Develops 1Mb DRAM
  • Line 1 opens in Giheung, Korea
  • Develops 256Kb DRAM
  • Launches VLSI business
  • Develops 64Kb DRAM
  • Breaks ground on campus in Giheung, Korea

Sowing the seeds of the future 1974-1979

A humble step marked the beginning of a journey toward innovation.
  • Starts mass production of ICs for LED wristwatches
  • Samsung acquires Hankook Semiconductor