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Our incredible
journey

From humble beginnings to a global semiconductor

powerhouse, our relentless passion for innovation has

been the common thread throughout our history

Creating
the future 2010-Recent

  • Breaks ground on EUV line in Hwaseong, Korea, and second memory line in Xi’an, China
  • Begins mass production of 5th-generation V-NAND and develops industry’s first 8Gb LPDDR5
  • Develops Samsung’s first 5G modem, Exynos Modem 5100
  • Launches automotive solution brands, Exynos Auto and ISOCELL Auto
  • Begins production of EUV-based 7nm LPP
  • Begins production in Pyeongtaek, South Korea
  • Foundry Business unit separates from the System LSI Business
  • Begins mass production of 2nd-generation 10nm FinFET process
  • Starts industry’s first mass production of 10nm FinFET SoCs
  • Starts industry’s first mass production of 10nm-class DRAM
  • Begins production in Line17
  • Starts industry’s first mass production of 14nm FinFET mobile APs
  • Opens new headquarters for U.S. semiconductor operations
  • Starts industry’s first mass production of 20nm-class 8Gb mobile DRAM (LPDDR4)
  • Begins production in Xi’an, China (SCS)
  • Starts industry’s first mass production of 3D Vertical NAND (V-NAND) memory
  • Introduces Exynos 5 Octa, the industry’s first mobile AP to implement big.LITTLE™ architecture
  • Starts industry’s first mass production of 30nm-class 4Gb mobile DRAM (LPDDR2)
  • Launches branded application processor, Exynos
  • Develops industry’s first 32nm HKMG process
  • Starts industry’s first mass production of 20nm-class NAND flash

Continuing
the
legacy 2000-2009

  • Starts industry’s first mass production of 40nm-class 2Gb DRAM
  • Begins production in Line2 of Austin, USA (SAS)
  • Develops industry’s first 16-chip MCP
  • Introduces the industry’s first 32GB SSDs
  • Develops industry’s first DDR3 SDRAM
  • Develops industry’s first 60nm-class 8Gb NAND flash
  • Achieves top market share in flash memory
  • Achieves top market share in LCD Driver ICs
  • Develops industry’s first 90nm-class 2Gb NAND flash
  • Establishes Hwaseong Campus

Taking
center stage 1990-1999

  • Starts shipping industry’s first 128Mb flash memory
  • Begins production in Austin, USA (SAS)
  • Develops industry’s first 1Gb DRAM
  • Develops industry’s first 256Mb DRAM
  • Opens industry’s first 200mm fabrication line (Line 5)
  • Achieves world’s top memory market share
  • Develops industry’s first 64Mb DRAM
  • Achieves world’s top DRAM market share

History
begins 1980-1989

  • Develops 4Mb DRAM
  • Develops 1Mb DRAM
  • Line 1 opens in Giheung, South Korea
  • Develops 256Kb DRAM
  • Initiates VLSI business
  • Develops 64Kb DRAM
  • Establishes Giheung campus

Planting
the seeds 1974-1979

  • IC mass production starts for LED wrist watches
  • Samsung Electronics acquires Hankook Semiconductor