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We push the boundaries of precision at ever-shrinking scales, continuously advancing our process nodes to deliver higher performance, greater efficiency, and scalable solutions for next-generation innovation.

12-inch

GAA | FinFET | FD-SOI | Planar


Cutting-edge processes that set the standard for
performance, speed, and scalability

SF2
SF2

SF2

Started mass production in 2025

SF2 is a second-generation MBCFET(GAA)-based leading-edge technology node enabling next-generation mobile, HPC, AI, and automotive applications. Building on the proven foundation of the first-generation MBCFET(GAA) node, SF2 delivers enhanced stability and higher performance for advanced computing workloads.

GAA
SF3
SF3

SF3

Started mass production in 2022

Samsung’s 3nm process leverages gate-all-around (GAA) architecture with advanced nanosheet channels to deliver significant improvements in power, performance, and area (PPA).

SF4
SF4

SF4

Started mass production in 2021

The first 4nm process, SF4E, was designed to power mobile applications and entered mass production in 2021.

SF5
SF5

SF5

Started mass production in 2021

5nm enables HPC systems to do more than ever, with less power than ever, lowering your energy footprint even as you break barriers in performance.

SF7
SF7

SF7

Started mass production in 2019

7nm introduced extreme ultraviolet (EUV) lithography to the world for the first time, putting silicon wafers through an exposure process that is far nimbler than conventional immersion ArF.

8nm
8nm

8nm

Started mass production in 2018

Samsung’s 8nm RF is a one-chip solution ideal for the rapid information sharing of 5G, delivering long-lasting power and crystal-clear signal quality from compact mobile devices.

28FDS
28FDS

28FDS

Started mass production in 2015

FD-SOI (Fully Depleted – Silicon on Insulator) is a process that overcomes some of the limitations of Bulk CMOS technology with improved performance, power and area.

14nm
14nm

14nm

Started mass production in 2014

Samsung’s integration of 3D FinFET technology into its 14nm process represented a light-speed jump in the foundry industry, raising performance, boosting power efficiency and widening scaling capabilities.

28nm
28nm

28nm

Started mass production in 2012

The 28nm Radio Frequency (RF) process lets chip designers enhance connectivity-focused applications with advanced RF functions, with 28RF process design kits (PDK) and verification methods.

8-inch

Mature nodes with revolutionary reliability,
updated for the fast-paced demands of
today’s market

70nm
70nm

70nm

Started mass production in 2011

Samsung’s 70nm process improved speed and lowered power demand over 90nm, while increasing yield rates to deliver an even higher number of good dies per wafer.

90nm
90nm

90nm

Started mass production in 2006

90nm system-on-chip design marked Samsung’s first leap into nanotechnology providing a low power option with reduced dynamic power.

NVM
130nm
130nm

130nm

Started mass production in 2002

130nm process is a go-to option for wearable and IoT devices, with the power management that keeps devices working their best on less power.

180nm
180nm

180nm

Started mass production in 2000

Samsung’s 180nm processes offer unrivaled accuracy and reliability, with ideal support for analog applications.