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  • Breakthrough
    performance
    redefines
    tomorrow
    Breakthrough performance
    redefines tomorrow
    Breakthrough
    performance
    redefines
    tomorrow

    Angled front and back views of Samsung DDR5 memory on a dark background.

DDR5 powers data-centric innovation
DDR5 powers data-centric innovation
DDR5 powers data-centric innovation

DDR5 meets the demands of industries experiencing an enormous burst in data. Delivering a new level of speed and increased capacity along with improved reliability, it is designed to enhance overall system performance. Samsung’s advanced memory technology propels the next era of computing across PCs and servers. DDR5 meets the demands of industries experiencing an enormous burst in data. Delivering a new level of speed and increased capacity along with improved reliability, it is designed to enhance overall system performance. Samsung’s advanced memory technology propels the next era of computing across PCs and servers. DDR5 meets the demands of industries experiencing an enormous burst in data. Delivering a new level of speed and increased capacity along with improved reliability, it is designed to enhance overall system performance. Samsung’s advanced memory technology propels the next era of computing across PCs and servers.

Extreme speed for data-intensive workloads Extreme speed for data-intensive workloads Extreme speed for data-intensive workloads

With transfer speeds of up to 8,000 Mbps, DDR5 meets the demands of increasingly complex workloads.

It delivers up to 2.5x higher bandwidth than DDR41), with double the burst length from 8 to 16, and twice the banks from 16 to 32. This architectural enhancement accelerates large-scale data processing and AI workloads.


1) Performance may vary. Speed comparisons are based on the previous generation DDR4.

With transfer speeds of up to 8,000 Mbps, DDR5 meets the demands of increasingly complex workloads. It delivers up to 2.5x higher bandwidth than DDR41), with double the burst length from 8 to 16, and twice the banks from 16 to 32. This architectural enhancement accelerates large-scale data processing and AI workloads.


1) Performance may vary. Speed comparisons are based on the previous generation DDR4.

With transfer speeds of up to 8,000 Mbps, DDR5 meets the demands of increasingly complex workloads. It delivers up to 2.5x higher bandwidth than DDR41), with double the burst length from 8 to 16, and twice the banks from 16 to 32. This architectural enhancement accelerates large-scale data processing and AI workloads.


1) Performance may vary. Speed comparisons are based on the previous generation DDR4.

An illustrative image of DDR5 with higher performance transfer speeds up to 8,000 Mpbs
Robust reliability with a self-correcting solution Robust reliability with a self-correcting solution Robust reliability with a self-correcting solution

ODECC (on-die error-correction code) technology applied in DDR5 helps maintain data integrity and reliability, supporting stable

high-performance operation. ODECC helps correct single bit errors, enhancing reliability even under demanding data-intensive workloads.

ODECC (on-die error-correction code) technology applied in DDR5 helps maintain data integrity and reliability, supporting stable high-performance operation. ODECC helps correct single bit errors, enhancing reliability even under demanding data-intensive workloads.

ODECC (on-die error-correction code) technology applied in DDR5 helps maintain data integrity and reliability, supporting stable high-performance operation. ODECC helps correct single bit errors, enhancing reliability even under demanding data-intensive workloads.

An image of Samsung DDR5 modules are crossed against an image of 'Non ODECC, ODECC' typography written on graphic symbolized the data.
Enhanced power efficiency Enhanced power efficiency Enhanced power efficiency

DDR5 achieves over 20% greater power efficiency than DDR42) through improved power management and optimized architecture.

The on-DIMM PMIC enables more efficient power regulation and stable power delivery, ensuring reliable performance

in HPC (high-performance computing) server environments.


2) Performance may vary. Power efficiency comparisons are based on the previous generation DDR4 under internal evaluations.

DDR5 achieves over 20% greater power efficiency than DDR42) through improved power management and optimized architecture. The on-DIMM PMIC enables more efficient power regulation and stable power delivery, ensuring reliable performance in HPC (high-performance computing) server environments.


2) Performance may vary. Power efficiency comparisons are based on the previous generation DDR4 under internal evaluations.

DDR5 achieves over 20% greater power efficiency than DDR42) through improved power management and optimized architecture. The on-DIMM PMIC enables more efficient power regulation and stable power delivery, ensuring reliable performance in HPC (high-performance computing) server environments.


2) Performance may vary. Power efficiency comparisons are based on the previous generation DDR4 under internal evaluations.

Graphic indicating that DDR5 power efficiency improved by more than 20%  background datacenter servers
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* The contents of this page may also include forward looking statements. Forward looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or the industry in which Samsung operates may differ materially from those made or suggested by the forward looking statements contained in this page.
* All data on products herein, including their performances, are based on internal testing using standard Samsung benchmarks under laboratory conditions.
* All design, features and specifications represented herein may change without notice.
* Images shown here have been adjusted for demonstration purposes and may appear differently on the actual products.
* Test results do not guarantee future performance under such test conditions, and the actual throughput or performance that any user will experience may vary depending upon many factors.
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