Skip to content

Logic Node

Processes You Can Build
the Future On

Logic Node
Logic Node

We’re overcoming the
challenges of precision at
an

ever-shrinking scale, refining
our processes
with every new

node to give you higher

performance, better
efficiency,
and more
scalable
solutions.

12-inch

GAA | FinFET | FD-SOI | Planar


Cutting-edge processes that set the standard for
performance, speed, and scalability

SF3
SF3

SF3

Started mass production in 2022

Samsung’s 3nm process utilizes gate-all-around (GAA) technology with special nanosheets that widen channels and squeeze in even greater improvements in PPA.

SF4
SF4

SF4

Started mass production in 2021

The first 4nm process, SF4E was tailor made to power mobile products and began mass production in 2021.

SF5
SF5

SF5

Started mass production in 2021

5nm enables HPC systems to do more than ever, with less power than ever, lowering your energy footprint even as you break barriers in performance.

SF7
SF7

SF7

Started mass production in 2019

7nm introduced extreme ultraviolet (EUV) lithography to the world for the first> time, putting silicon wafers through an exposure process that is far nimbler than conventional immersion ArF.

8nm
8nm

8nm

Started mass production in 2018

Samsung’s 8nm RF is a one-chip solution ideal for the rapid information sharing of 5G, delivering long-lasting power and crystal-clear signal quality from compact mobile devices.

28FDS
28FDS

28FDS

Started mass production in 2015

FD-SOI (Fully Depleted – Silicon on Insulator) is a process that overcomes some of the limitations of Bulk CMOS technology with improved performance, power and area.

14nm
14nm

14nm

Started mass production in 2014

Samsung’s integration of 3D FinFET technology into its 14nm process represented a light-speed jump in the foundry industry, raising performance, boosting power efficiency and widening scaling capabilities.

28nm
28nm

28nm

Started mass production in 2012

The 28nm Radio Frequency (RF) process lets chip designers enhance connectivity-focused applications with advanced RF functions, with 28RF process design kits (PDK) and verification methods.

8-inch

Mature nodes with revolutionary reliability,
updated for the fast-paced demands of
today’s market

70nm
70nm

70nm

Started mass production in 2011

Samsung’s 70nm process improved speed and lowered power demand over 90nm, while increasing yield rates to deliver an even higher number of good dies per wafer.

90nm
90nm

90nm

Started mass production in 2006

90nm system-on-chip design marked Samsung’s first leap into nanotechnology providing a low power option with reduced dynamic power.

NVM
130nm
130nm

130nm

Started mass production in 2002

130nm process is a go-to option for wearable and IoT devices, with the power management that keeps devices working their best on less power.

180nm
180nm

180nm

Started mass production in 2000

Samsung’s 180nm processes offer unrivaled accuracy and reliability, with ideal support for analog applications.

Would you like to
leave this page?
If you leave this page, the content you are creating
will not be saved.

Registration Are you sure you want to submit this?

Thank you! Please confirm your registration

Your subscription is not active yet!
An email with an activation link
has just been sent to your email address.
Please activate your subscription by clicking on
the activation link inside the email.

Confirm
Thank you! Please confirm

your existing registration

You have already registered, but before we can send you the
information about upcoming events, we need your confirmation.

If you missed our previous email, please use the button below to resend it.
To activate your subscription, please click on the link included in the email.

Resend
Alert

To proceed, please click on the "check" button located in the email section.

Confirm