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  • Great performance
    for all solutions
    Great performance
    for all solutions
    Great performance
    for all solutions

    Front and back view of Samsung DDR4.
Exceptional speed, high reliability,
low energy consumption
Exceptional speed, high reliability, low energy consumption
Exceptional speed,
high reliability, low
energy consumption

High-performing memory empowers faster, powerful solutions.
Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.
High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. High-performing memory empowers
faster, powerful solutions.
Samsung DDR4
delivers top speed with better bandwidth
and reliability using less energy.

An evolution in performance
An evolution in performance
An evolution in performance

Increased bandwidth, up to 3,200 Mbps
Increased bandwidth, up to 3,200 Mbps
Increased bandwidth, up to 3,200 Mbps
Easily processing massive workloads with enhanced speed,
the DDR4 transfers more data faster than ever before,
offering 4 bank groups (total 16 banks) to reduce interleaving
delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Easily processing massive workloads with enhanced speed, the DDR4 transfers more data faster than ever before, offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Easily processing massive workloads with enhanced
speed, the DDR4 transfers more data faster than ever
before, offering 4 bank groups (total 16 banks) to reduce
interleaving delays, plus 3,200 Mbps bandwidth and 1
TB/s system memory.
Infographic describing increased bandwidth of DDR4 when compared to DDR3; the bandwidth of DDR4 has been increased 2X, DDR3 - 1600Mbps, DDR4 - 3200Mbps
Infographic describing increased bandwidth of DDR4 when compared to DDR3; the bandwidth of DDR4 has been increased 2X, DDR3 - 1600Mbps, DDR4 - 3200Mbps

Less energy,
greater efficiency
Less energy, greater efficiency
Less energy,
greater
efficiency

Advanced process technology
Reduce core and on/off power
Advanced process technology Reduce core and on/off power
Advanced process technology
Reduce core
and on/off power
Samsung’s industry-first 1x nm process technology enables DDR4
to consume less power while boosting performance, reducing TCO.
The 1.2V low operating voltage and Pseudo Open Drain (POD)
interface enables lower power consumption, using 25% less energy.
Samsung’s industry-first 1x nm process technology enables DDR4
to consume less power while boosting performance, reducing TCO. The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
Samsung’s industry-first 1x nm process technology
enables DDR4 to consume less power while boosting
performance, reducing TCO.
The 1.2V low operating
voltage and Pseudo Open Drain (POD) interface enables
lower power consumption, using 25% less energy.
Infographic describing 25% Lower Power Consumption
Infographic describing 25% Lower Power Consumption

Improved reliability
Improved reliability
Improved
reliability

Safe CRC transmission
Parity bit to prevent errors
Safe CRC transmission Parity bit to prevent errors
Safe CRC transmission
Parity bit to prevent
errors
System reliability is ever more critical as data centers process ever
more traffic. Advanced features of the Samsung DDR4 ensure
superior data transmission, including Write CRC to help recognize
multibit failures and parity checks for CMD/ADD to prevent system
malfunctions.
System reliability is ever more critical as data centers process ever more traffic. Advanced features of the Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.
System reliability is ever more critical as data centers
process ever more traffic. Advanced features of the
Samsung DDR4 ensure
superior data transmission,
including Write CRC to help recognize multibit failures
and parity checks for CMD/ADD to prevent system
malfunctions.
Infographic describing High Reliability that consist of Write CRC and Parity for CMD/ADD
Infographic describing High Reliability that consist of Write CRC and Parity for CMD/ADD

Results
All Products

All product specifications reflect internal test results and are subject to variations by user’s system configuration

All product images shown are for illustration purposes only and may not be an exact representation of the product

Samsung reserves the right to change product images and specifications at any time without notice

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For further details on product specifications, please contact sales representative of your region.

Applications for DDR4