Leading Memory Innovation with HBM3E

Samsung Keeping Pace with Generative AI
The pulse of generative AI is racing at a pace that will require the top players in the memory market to produce unparalleled bandwidth to keep up with the number-crunching intensity required by AI/ML and other high-performance computing workloads. Samsung is leading the pack with its latest 5th generation high bandwidth memory (HBM) device: HBM3E 12H DRAM. This device is designed to give a significant edge for high-demand systems, data centers, AI applications, and advanced graphic-unit processors that power AI computing.

HBM3E Power and Performance
Starting from the ground up, this impressive new DRAM device is built on technologies such as high-k metal gates (HKMG), which replaces the former insulation layers with material that reduces electrical current leakage. Using this latest technology optimizes the internal circuitry, increasing performance and also improving the device power efficiency by 12% compared to the previous generation. Adding to the performance matrix of this DRAM is its capability to produce data rates of 9.8Gbps per pin, giving it a super-fast 1,250GB/s of performance speed.

Stacking the Chips and Packaging
The strategic stacking of 12 layers of 24Gb DRAM chips using Through-Silicon Via (TSV) technology gives the HBM3E an astounding bandwidth rate of 1,250GB/s and an industry-leading 36GB of capacity per layer. This improves capacity by 50% over its 8-layer HBM3 predecessor. Also incorporated into this device is the Advanced Thermal Compression Non-Conductive Film (TC NCF) which allows for better heat dissipation needed for the device to perform at optimal temperature ranges. The HBM3E and HBM3 chip sizes are compatible with each other and can easily transfer hardware layouts from HBM3 to HBM3E.

HBM3E in the Memory Market
What does all of this impressive technological innovation mean for the memory market? Simply this: Samsung will remain the leader in providing the highest performing HBM devices to the market.