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  • Breakthrough performance
    redefines tomorrow
    Breakthrough performance
    redefines tomorrow
    Breakthrough performance
    redefines tomorrow

    Samsung Semiconductor DRAM DDR5.

DDR5 ushers in
data-centric innovation
DDR5 ushers in
data-centric innovation
DDR5 ushers in
data-centric
innovation

DDR5 meets the demands of industries experiencing an enormous burst in data. A new level of speed, improved capacity,
and bolstered reliability are packed into DDR5 to enhance overall system performance.
Samsung's memory technology propels the next era of planet-friendly innovation with power-saving DDR5.
DDR5 meets the demands of industries experiencing an enormous burst in data. A new level of speed, improved
capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance.
Samsung's memory technology propels the next era of planet-friendly innovation with power-saving DDR5.
DDR5 meets the demands of industries
experiencing an enormous burst in data. A new
level of speed, improved capacity,
and bolstered reliability are packed into DDR5
to enhance overall system performance.
Samsung's memory technology propels the
next era of planet-friendly innovation with
power-saving DDR5.
An illustrative image of Samsung DDR5 chip above The Earth.
An illustrative image of Samsung DDR5 chip above The Earth.

Breathtaking speed
for huge real-time data
Breathtaking speed
for huge real-time data
Breathtaking
speed
for huge
real-time
data

With exceptional transfer speeds of up to 7,200 Mbps, DDR5 effectively handles the ever-increasing demands of larger, more
complex data workloads. DDR5 brings more than doubled increase in performance compared to DDR4, with double the burst length from 8 to 16, and double the banks from 16 to 32. The astonishing performance raises the ceiling on big data processing, while seamlessly handling 8K content.
With exceptional transfer speeds of up to 7,200 Mbps, DDR5 effectively handles the ever-increasing demands of larger, more complex data workloads. DDR5 brings more than doubled increase in performance compared to DDR4, with double the burst length from 8 to 16, and double the banks from 16 to 32. The astonishing performance raises the ceiling on big data processing, while seamlessly handling 8K content.
With exceptional transfer speeds of up to
7,200 Mbps, DDR5 effectively handles the
ever-increasing demands of larger, more
complex data workloads. DDR5 brings more
than doubled increase in performance
compared to DDR4, with double the burst
length from 8 to 16, and double the banks from
16 to 32. The astonishing performance raises the
ceiling on big data processing, while seamlessly
handling 8K content.
An illustrative image of DDR5 with higher performance transfer speeds of up to 7,200 Mbps.
An illustrative image of DDR5 with higher performance transfer speeds of up to 7,200 Mbps.

Twice the capacity
to fuel industry innovation
Twice the capacity
to fuel industry innovation
Twice the
capacity
to fuel
industry
innovation

Samsung's 10nm-class process and EUV technology enable chip units to leap from 16Gb to 32Gb. Doubling chip
capacity means one module can provide up to 512GB, to fluidly handle huge simultaneous workloads,
with scalability for future innovation.
Samsung's 10nm-class process and EUV technology enable chip units to leap from 16Gb to 32Gb. Doubling chip capacity means one module can provide up to 512GB, to fluidly handle huge simultaneous workloads, with scalability for future innovation.
Samsung's 10nm-class process and EUV
technology enable chip units to leap from 16Gb
to 32Gb. Doubling chip capacity means one
module can provide up to 512GB, to fluidly
handle huge simultaneous workloads,
with scalability for future innovation.
An image of float the Samsung DDR5 chip and variety of application images in the datacenter, with 'Up to 512GB, 2X capacity' typography.
An image of float the Samsung DDR5 chip and variety of application images in the datacenter, with 'Up to 512GB, 2X capacity' typography.

Robust reliability
with a self-correcting solution
Robust reliability
with a self-correcting solution
Robust
reliability
with a self-
correcting
solution

ODECC (on-die error-correction code) technology applied in DDR5 helps maintain secure and stable data reliability,
to fully leverage powerful performance. ODECC virtually eliminates single bit errors for enhanced reliability
even with the strenuous demands of big data.
ODECC (on-die error-correction code) technology applied in DDR5 helps maintain secure and stable data reliability, to fully leverage powerful performance. ODECC virtually eliminates single bit errors for enhanced reliability even with the strenuous demands of big data.
ODECC (on-die error-correction code)
technology applied in DDR5 helps maintain
secure and stable data reliability,
to fully leverage powerful performance.
ODECC virtually eliminates single bit errors for
enhanced reliability even with the strenuous
demands of big data.
An image of Samsung DDR5 chips are crossed against an image of 'Non ODECC, ODECC' typography written on graphic symbolized the data.
An image of Samsung DDR5 chips are crossed against an image of 'Non ODECC, ODECC' typography written on graphic symbolized the data.

The energy-saving choice
to sustain our planet
The energy-saving choice
to sustain our planet
The energy-
saving choice
to sustain our
planet

DDR5 achieves 30% greater power efficiency than DDR4 through improved performance and power reduction.
Replacing a data center's DDR4 with DDR5 saves power of up to 1TWh annually. The on-DIMM PMIC further boosts
power management efficiency and power supply stability. It is the all-around sustainable choice for our environment.
DDR5 achieves 30% greater power efficiency than DDR4 through improved performance and power reduction.
Replacing a data center's DDR4 with DDR5 saves power of up to 1TWh annually. The on-DIMM PMIC further boosts power management efficiency and power supply stability. It is the all-around sustainable choice for our environment.
DDR5 achieves 30% greater power efficiency
than DDR4 through improved performance and
power reduction. Replacing a data center's
DDR4 with DDR5 saves power of up to 1TWh
annually. The on-DIMM PMIC further boosts
power management efficiency and power
supply stability. It is the all-around sustainable
choice for our environment.
An illustrative image of 'up to Power efficiency 30%' typography against an image of trees, mountain in the earth.
An illustrative image of 'up to Power efficiency 30%' typography against an image of trees, mountain in the earth.

* All product specifications reflect internal test results and are subject to variations by user’s system configuration.
* All product images shown are for illustration purposes only and may not be an exact representation of the product.
* Samsung reserves the right to change product images and specifications at any time without notice.