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  • Enabling the new era
    of supercomputing
    Enabling the new era
    of supercomputing
    Enabling the new era
    of supercomputing

    Samsung Semiconductor DRAM HBM2, Enabling the New Era of Supercomputing

Driving the growth of new technologies
Driving the growth of new technologies
Driving the growth
of new technologies

Samsung HBM2 Flarebolt revolutionizes memory by empowering high bandwidth,
swift data transfer, advanced graphics and next-gen networking in small form factors.
Samsung HBM2 Flarebolt revolutionizes memory by empowering high bandwidth,swift data transfer, advanced graphics and next-gen networking in small form factors. Samsung HBM2 Flarebolt revolutionizes
memory by empowering high bandwidth,
swift data transfer, advanced graphics and
next-gen networking in small form
factors.

Moving to the
next level of HPC
Moving to the next level of HPC
Moving to the
next level of
HPC

8x faster than GDDR5
1 TB/s system memory bandwidth
8x faster than GDDR5 1 TB/s system memory bandwidth
8x faster than GDDR5 1 TB/s system memory
bandwidth
Samsung’s HBM2 Flarebolt delivers the fastest performance,
increased 1,024 I/O and 1 TB/s of system memory bandwidth with
256 GB/s via 8 channels. The HBM2 Flarebolt’s record-setting data
transmission meets the rising market demands of the new IT
industry, such as AI and Machine Learning.
Samsung’s HBM2 Flarebolt delivers the fastest performance, increased 1,024 I/O and 1 TB/s of system memory bandwidth with 256 GB/s via 8 channels. The HBM2 Flarebolt’s record-setting data transmission meets the rising market demands of the new IT industry, such as AI and Machine Learning.
Samsung’s HBM2 Flarebolt delivers the fastest
performance, increased 1,024 I/O and 1 TB/s of system
memory bandwidth with
256 GB/s via 8 channels. The
HBM2 Flarebolt’s record-setting data transmission
meets the rising market demands of the new IT
industry, such as AI and Machine Learning.
Samsung Semiconductor DRAM HBM2, Fastest performance, 1,024 I/O Bandwidth, 1 TB/S System Memory

Proven reliability
with lower power
Proven reliability with lower power
Proven
reliability with
lower power

20% improved power efficiency
20% improved power efficiency
20% improved power efficiency
With 20% less power consumption compared to 1.5 V of GDDR5,
Samsung HBM2 Flarebolt’s 1.35 V operating voltage makes control
of power consumption significantly more effective.
With 20% less power consumption compared to 1.5 V of GDDR5, Samsung HBM2 Flarebolt’s 1.35 V operating voltage makes control of power consumption significantly more effective.
With 20% less power consumption compared to 1.5 V of
GDDR5, Samsung HBM2 Flarebolt’s 1.35 V operating
voltage makes control of power consumption
significantly more effective.
Samsung Semiconductor DRAM HBM2 Flarebolt, 20% Lower Power Consumption

Highly condensed
package
Highly condensed package
Highly
condensed
package

Design flexibility with 8GB per cube
94% less PCB space used
Design flexibility with 8GB per cube 94% less PCB space used
Design flexibility with 8GB per cube 94% less
PCB space used
The integral design, combining stacked memory and CPU/GPU,
accomplishes massive space saving over GDDR5. The Samsung
HBM2 Flarebolt occupies 94% less space compared to GDDR5 and
presents the perfect solution for the sleekest of small form factors.
The integral design, combining stacked memory and CPU/GPU, accomplishes massive space saving over GDDR5. The Samsung HBM2 Flarebolt occupies 94% less space compared to GDDR5 and presents the perfect solution for the sleekest of small form factors.
The integral design, combining stacked memory and
CPU/GPU, accomplishes massive space saving over
GDDR5. The Samsung HBM2 Flarebolt occupies 94%
less space compared to GDDR5 and presents the perfect
solution for the sleekest of small form factors.
Samsung Semiconductor DRAM HBM2, 94% Less PCB Space Used
Results
All Products

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Applications for HBM2 Flarebolt