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Pushing the boundaries of GDDR Pushing the boundaries of GDDR Pushing the boundaries of GDDR

As the first DRAM to feature PAM3 signaling, GDDR7 represents a major step forward for graphics memory in the AI era. Compared to the previous generation GDDR71), it delivers up to 71% higher bandwidth, positioning GDDR7 as a high-performance graphics memory solution for

next-generation AI and accelerated computing workloads.


1) Comparison with the GDDR7 16Gb

As the first DRAM to feature PAM3 signaling, GDDR7 represents a major step forward for graphics memory in the AI era. Compared to the previous generation GDDR71), it delivers up to 71% higher bandwidth, positioning GDDR7 as a high-performance graphics memory solution for next-generation AI and accelerated computing workloads.


1) Comparison with the GDDR7 16Gb

As the first DRAM to feature PAM3 signaling, GDDR7 represents a major step forward for graphics memory in the AI era. Compared to the previous generation GDDR71), it delivers up to 71% higher bandwidth, positioning GDDR7 as a high-performance graphics memory solution for next-generation AI and accelerated computing workloads.


1) Comparison with the GDDR7 16Gb

Samsung GDDR7 for diverse AI and graphics applications.
Faster speed, enabled by PAM3 Faster speed, enabled by PAM3 Faster speed, enabled by PAM3

Samsung’s GDDR7 achieves up to 25% higher I/O speed per pin compared to the previous generation, delivering leading performance among standardized graphics memory products. This is enabled by the industry’s first application of PAM3 signaling2), which encodes data using three signal levels rather than two in conventional NRZ3), improving bit-level efficiency. This increase in per-pin data rate translates into higher overall bandwidth, enabling faster data processing for AI and graphics workloads.


2) Pulse Amplitude Modulation 3 (PAM3), a signaling method using three signal levels

3) Non Return to Zero (NRZ), a signaling method using two signal levels

 

Samsung’s GDDR7 achieves up to 25% higher I/O speed per pin compared to the previous generation, delivering leading performance among standardized graphics memory products. This is enabled by the industry’s first application of PAM3 signaling2), which encodes data using three signal levels rather than two in conventional NRZ3), improving bit-level efficiency. This increase in per-pin data rate translates into higher overall bandwidth, enabling faster data processing for AI and graphics workloads.


2) Pulse Amplitude Modulation 3 (PAM3), a signaling method using three signal levels

3) Non Return to Zero (NRZ), a signaling method using two signal levels

 

Samsung’s GDDR7 achieves up to 25% higher I/O speed per pin compared to the previous generation, delivering leading performance among standardized graphics memory products. This is enabled by the industry’s first application of PAM3 signaling2), which encodes data using three signal levels rather than two in conventional NRZ3), improving bit-level efficiency. This increase in per-pin data rate translates into higher overall bandwidth, enabling faster data processing for AI and graphics workloads.


2) Pulse Amplitude Modulation 3 (PAM3), a signaling method using three signal levels

3) Non Return to Zero (NRZ), a signaling method using two signal levels

 

SAMSUNG GDDR7 memory chip showcasing 40+Gbps performance with NRZ and PAM3 signal streams on a dark background.
Optimized power efficiency
for cost-effective operations
Optimized power efficiency for cost-effective operations Optimized power efficiency for cost-effective operations

GDDR7 improves power efficiency by up to 30%4), enabling lower power consumption while sustaining high performance.

In addition, optimized power management helps reduce standby power consumption, contributing to improved operational efficiency

and a lower total cost of ownership (TCO).


4) Comparison with the GDDR7 16Gb

GDDR7 improves power efficiency by up to 30%4), enabling lower power consumption while sustaining high performance. In addition, optimized power management helps reduce standby power consumption, contributing to improved operational efficiency and a lower total cost of ownership (TCO).


4) Comparison with the GDDR7 16Gb

GDDR7 improves power efficiency by up to 30%4), enabling lower power consumption while sustaining high performance. In addition, optimized power management helps reduce standby power consumption, contributing to improved operational efficiency and a lower total cost of ownership (TCO).


4) Comparison with the GDDR7 16Gb

Samsung GDDR7 with up to 30% improved power efficiency vs. previous generation
Robust stability Robust stability Robust stability

Enhanced reliability through improved thermal stability. GDDR7 achieves 11% reduction in thermal resistance5) through newly introduced package materials and an optimized circuit design.

By improving heat dissipation, it helps maintain stable operation under sustained workloads, reducing the risk of performance loss and other potential hardware issues.


5) Comparison with the GDDR7 16Gb

Enhanced reliability through improved thermal stability. GDDR7 achieves 11% reduction in thermal resistance5) through newly introduced package materials and an optimized circuit design.

By improving heat dissipation, it helps maintain stable operation under sustained workloads, reducing the risk of performance loss and other potential hardware issues.


5) Comparison with the GDDR7 16Gb

Enhanced reliability through improved thermal stability. GDDR7 achieves 11% reduction in thermal resistance5) through newly introduced package materials and an optimized circuit design.

By improving heat dissipation, it helps maintain stable operation under sustained workloads, reducing the risk of performance loss and other potential hardware issues.


5) Comparison with the GDDR7 16Gb

Samsung GDDR7 with up to 11% lower thermal resistance
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