As shown in the diagram, SOI MOSFET is used to make a transistor on top of monocrystalline silicon for the channels of the structure mentioned above. Transistors using SOI substrates have the advantage of structurally blocking leakage current thanks to having a BOX placed below them. In addition, since the capacitance generated among the Source, Drain and Body does not occur with the BOX, the total capacitance can be reduced, contributing to a reduction of malfunctions caused by alpha particles, resulting in a lowering of the SER (Soft Error Rate).
*Soft Error Rate: The percentage of malfunctions in a semiconductor chip caused by extremely small amounts of radioactive material contained in the internal components of the chip.
SOI technology is gaining attention as a technology that can help to make high-performance, low-power ICs (Integrated Circuits) by overcoming existing limitations. In the following article, we will cover detailed information regarding the two processes utilizing SOI technology, PDSOI and FDSOI.