As can be seen above, MBCFET provides superior design flexibility compared to FinFET. Transistors are designed to have different amounts of current flowing through them. In semiconductors that use many transistors, the amount of current must be regulated to turn transistors on and off at the required timing and control logic, which requires increasing or decreasing the width of the channel.
In conventional FinFET structures, the height of the fin that the gate is wrapped around is not adjustable, so to increase the overall channel width, the number of fins is increased horizontally. But this method only enables the adjustment of the discontinuous channel width, because when the channel width of a gate-surrounded file is α, it can also only be decreased or increased by multiples of α. This is a serious limitation.
MBCFETs, on the other hand, are stacked on top of each other with the fins laid sideways, and the width of the nanosheets can be adjusted to provide more channel width options than FinFETs, which is a feature that can be useful for the entire design — with distinguished superiority in analog SRAM designs. MBCFETs offer these advantages because they have been designed to allow the channel width of the transistors to be fine-tuned independently in order to find an optimal balance between P-type metal-oxide-semiconductor transistors (PMOS) and N-type metal-oxide-semiconductor transistors (NMOS).