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  • Great performance
    for all solutions
    Great performance
    for all solutions
    Great performance
    for all solutions

    Front and back view of Samsung DDR4.
Exceptional speed, high reliability,
low energy consumption
Exceptional speed, high reliability, low energy consumption
Exceptional speed, high reliability, low energy consumption

High-performing memory empowers faster, powerful solutions.
Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy. High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.

An evolution in performance
An evolution in performance
An evolution in performance

Increased bandwidth, up to 3,200 Mbps
Increased bandwidth, up to 3,200 Mbps
Increased bandwidth, up to 3,200 Mbps
Easily processing massive workloads with enhanced speed,
the DDR4 transfers more data faster than ever before,
offering 4 bank groups (total 16 banks) to reduce interleaving
delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Easily processing massive workloads with enhanced speed, the DDR4 transfers more data faster than ever before, offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Easily processing massive workloads with enhanced speed, the DDR4 transfers more data faster than ever before, offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory.
Infographic describing increased bandwidth of DDR4 when compared to DDR3; the bandwidth of DDR4 has been increased 2X, DDR3 - 1600Mbps, DDR4 - 3200Mbps

Less energy,
greater efficiency
Less energy, greater efficiency
Less energy, greater efficiency

Advanced process technology
Reduce core and on/off power
Advanced process technology Reduce core and on/off power
Advanced process technology Reduce core and on/off power
Samsung’s industry-first 1x nm process technology enables DDR4
to consume less power while boosting performance, reducing TCO.
The 1.2V low operating voltage and Pseudo Open Drain (POD)
interface enables lower power consumption, using 25% less energy.
Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting< performance, reducing TCO. The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting< performance, reducing TCO. The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
Infographic describing 25% Lower Power Consumption

Improved reliability
Improved reliability
Improved reliability

Safe CRC transmission
Parity bit to prevent errors
Safe CRC transmission Parity bit to prevent errors
Safe CRC transmission Parity bit to prevent errors
System reliability is ever more critical as data centers process ever
more traffic. Advanced features of the Samsung DDR4 ensure
superior data transmission, including Write CRC to help recognize
multibit failures and parity checks for CMD/ADD to prevent system
malfunctions.
System reliability is ever more critical as data centers process ever more traffic. Advanced features of the
Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.
System reliability is ever more critical as data centers process ever more traffic. Advanced features of the
Samsung DDR4 ensure superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.
Infographic describing High Reliability that consist of Write CRC and Parity for CMD/ADD

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All product specifications reflect internal test results and are subject to variations by the user's system configuration

All product images shown are for illustration purposes only and may not be an exact representation of the product

Samsung reserves the right to change product images and specifications at any time without notice

For further details on product specifications, please contact the sales representative of your region.

FAQs

  • DDR4 is a memory standard designed as a better, faster, more reliable replacement for DDR3. a DDR4 module, or DIMM, looks very similar to a DDR3 DIMM. However, DDR4 has 288 pins compared with DDR3’s 240 pins; DDR4 SO-DIMMS has 260 pins instead of 204 in DDR3. The DDR4 key notch is in a different place, and the edge connector looks like a slightly curved “V” to facilitate insertion. This design also lowers insertion force, as not all pins are engaged simultaneously during module insertion. DDR4 modules are more energy-efficient, operating only at 1.2V compared with DDR3’s 1.5V or 1.35V. The reduced power consumption gives substantial power savings and allows operation at higher speeds without higher power and cooling requirements. DIMM densities start at 2 GB, reaching up to 128 GB – a big leap from DDR3’s 512 MB to 32 GB capacities. Latest DDR4 modules for embedded and industrial applications deliver high-speed data transfers up to 3200 MT/s. DDR4-3200, the latest industrial DDR4 offering from ATP, transfers data about 70% faster than DDR3-1866, one of the fastest DDR3 versions available, for a big boost in theoretical peak performance.
  • DDR3 and DDR4 are not cross-compatible. The physical sockets are different among other things like input voltage, pin count, etc.
  • Essentially, DDR3 is compatible with almost every motherboard and socket out there, but DDR4 is only compatible with boards using Intel's X99 chipset and LGA 2011 processor socket.

Applications for DDR4