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Samsung to Advance High Performance Computing Systems with Launch of Industry's First 3rd-generation (16GB) HBM2E

New HBM2E stacks eight 16Gb DRAM dies to achieve 16GB package capacity and ensures a stable data transfer speed at 3.2Gbps

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Samsung HBM2E Flashbolt Chip against an image of a server with state-of-the-art technology."
Samsung HBM2E Flashbolt Chip against an image of a server with state-of-the-art technology."
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the market launch of 'HBM2E Flashbolt', its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize high performance computing (HPC) systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner. "With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace." Ready to deliver twice the capacity of the previous-generation 8GB HBM2 'Aquabolt', the new HBM2E Flashbolt also sharply increases performance and power efficiency to significantly improve next-generation computing systems. The 16GB capacity is achieved by vertically stacking eight layers of 10nm-class (1y) 16-gigabit (Gb) DRAM dies on top of a buffer chip. This HBM2E package is then interconnected in a precise arrangement of more than 40,000 ‘through silicon via’ (TSV) microbumps, with each 16Gb die containing over 5,600 of these microscopic holes. Samsung's HBM2E Flashbolt provides a highly reliable data transfer speed of 3.2 gigabits per second (Gbps) by leveraging a proprietary optimized circuit design for signal transmission, while offering a memory bandwidth of 410GB/s per stack. Samsung’s HBM2E can also attain a transfer speed of 4.2Gbps, the maximum tested data rate to date, enabling up to a 538GB/s bandwidth per stack in certain future applications. This would represent a 1.75x enhancement over HBM2 Aquabolt's 307GB/s. Samsung expects to begin volume production during the first half of this year. The company will continue providing its second-generation HBM2 Aquabolt lineup while expanding its third-generation HBM2E Flashbolt offering, and will further strengthen collaborations with ecosystem partners in next-generation systems as it accelerates the transition to HBM solutions throughout the premium memory market. About Samsung Electronics Co., Ltd. Samsung inspires the world and shapes the future with transformative ideas and technologies. The company is redefining the worlds of TVs, smartphones, wearable devices, tablets, digital appliances, network systems, and memory, system LSI, foundry and LED solutions. For the latest news, please visit the Samsung Newsroom at https://news.samsung.com.
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