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  • Redefining performance Redefining efficiency
    Redefining performance
    Redefining efficiency
    Redefining performance
    Redefining efficiency

    Samsung HBM4 high-bandwidth memory product

HBM4, 30+ years of technology leadership
- setting a new performance standard
HBM4, 30+ years of technology leadership
- setting a new performance standard
HBM4, 30+ years of technology leadership - setting a new performance standard

Built on over 30 years of technology leadership, Samsung moves beyond limits to prepare what’s next.
MAX delivers data processing performance of up to 13 Gbps, built on 1c DRAM and
4nm foundry technologies to achieve world-class performance and power efficiency.
As a fully integrated semiconductor solutions provider spanning memory, foundry, and advanced packaging, Samsung
partners with customers to address challenges and help drive the future forward. Built on over 30 years of technology leadership, Samsung moves beyond limits to prepare what’s next. MAX delivers data processing performance of up to 13 Gbps, built on 1c DRAM and 4nm foundry technologies to achieve world-class performance and power efficiency. As a fully integrated semiconductor solutions provider spanning memory, foundry, and advanced packaging, Samsung partners with customers to address challenges and help drive the future forward. Built on over 30 years of technology leadership, Samsung moves beyond limits to prepare what’s next. MAX delivers data processing performance of up to 13 Gbps, built on 1c DRAM and 4nm foundry technologies to achieve world-class performance and power efficiency. As a fully integrated semiconductor solutions provider spanning memory, foundry, and advanced packaging, Samsung partners with customers to address challenges and help drive the future forward.

Breaking AI system limits
with up to 2.7× performance Breaking AI system limits
with up to 2.7× performance Breaking AI system limits with up to 2.7× performance

As AI models scale and the convergence of training and inference accelerates, 

memory performance becomes a decisive factor in system efficiency and capability.

Samsung HBM4 pushes beyond limits, delivering up to 3,300GB/s of bandwidth — 

approximately a 2.7× improvement over previous generations — 

and providing a powerful foundation for the evolution of AI systems.

As AI models scale and the convergence of training and inference accelerates, memory performance becomes a decisive factor in system efficiency and capability. Samsung HBM4 pushes beyond limits, delivering up to 3,300GB/s of bandwidth — approximately a 2.7× improvement over previous generations — and providing a powerful foundation for the evolution of AI systems.

As AI models scale and the convergence of training and inference accelerates, memory performance becomes a decisive factor in system efficiency and capability. Samsung HBM4 pushes beyond limits, delivering up to 3,300GB/s of bandwidth — approximately a 2.7× improvement over previous generations — and providing a powerful foundation for the evolution of AI systems.

HBM4 high-bandwidth memory integration example image
2,048 I/O pins
Breakthrough bandwidth 2,048 I/O pins
Breakthrough bandwidth 2,048 I/O pins
Breakthrough bandwidth

Samsung HBM4 doubles I/O pin count from 1,024 to 2,048, enabling an interface 

that transfers more data simultaneously and significantly expands total memory bandwidth.

This significantly reduces memory bottlenecks in AI accelerators, improving both system performance and energy efficiency.

Samsung HBM4 doubles I/O pin count from 1,024 to 2,048, enabling an interface that transfers more data simultaneously and significantly expands total memory bandwidth. This significantly reduces memory bottlenecks in AI accelerators, improving both system performance and energy efficiency.

Samsung HBM4 doubles I/O pin count from 1,024 to 2,048, enabling an interface that transfers more data simultaneously and significantly expands total memory bandwidth. This significantly reduces memory bottlenecks in AI accelerators, improving both system performance and energy efficiency.

Comparison image of bandwidth based on I/O pin count difference (1,024 pins on left / 2,048 pins on right)
Leading-edge DRAM technology
A new dimension of efficiency and reliability Leading-edge DRAM technology
A new dimension of efficiency and reliability Leading-edge DRAM technology
A new dimension of efficiency and reliability

Samsung HBM4 incorporates 1c DRAM along with low-voltage TSV (Through Silicon Via) I/O design and 

advanced PDN (Power Distribution Network) optimization technologies. 

This delivers approximately 40% higher energy efficiency, along with a 10% improvement 

in vertical thermal resistance and 30% better heat dissipation. 

Optimized for data center environments, Samsung HBM4 combines top-tier performance with 

dependable reliability, helping reduce customers’ operational costs.

Samsung HBM4 incorporates 1c DRAM along with low-voltage TSV (Through Silicon Via) I/O design and advanced PDN (Power Distribution Network) optimization technologies. This delivers approximately 40% higher energy efficiency, along with a 10% improvement in vertical thermal resistance and 30% better heat dissipation. Optimized for data center environments, Samsung HBM4 combines top-tier performance with dependable reliability, helping reduce customers’ operational costs.

Samsung HBM4 incorporates 1c DRAM along with low-voltage TSV (Through Silicon Via) I/O design and advanced PDN (Power Distribution Network) optimization technologies. This delivers approximately 40% higher energy efficiency, along with a 10% improvement in vertical thermal resistance and 30% better heat dissipation. Optimized for data center environments, Samsung HBM4 combines top-tier performance with dependable reliability, helping reduce customers’ operational costs.

Left: 40% Improved Power Efficiency Icon, Right: 10% Improved Thermal Resistance Icon
The system architect of
HBM – from memory to packaging The system architect of
HBM – from memory to packaging The system architect of HBM – from memory to packaging

As HBM evolves, the importance of the base die continues to grow. 

As the system architect of HBM - from memory to packaging - Samsung brings together its leadership 

in memory technology, logic design built on leading-edge foundry processes, and advanced packaging 

to deliver industry-leading HBM performance and quality, providing AI memory solutions optimized for customer needs.

As HBM evolves, the importance of the base die continues to grow. As the system architect of HBM - from memory to packaging - Samsung brings together its leadership in memory technology, logic design built on leading-edge foundry processes, and advanced packaging to deliver industry-leading HBM performance and quality, providing AI memory solutions optimized for customer needs.

As HBM evolves, the importance of the base die continues to grow. As the system architect of HBM - from memory to packaging - Samsung brings together its leadership in memory technology, logic design built on leading-edge foundry processes, and advanced packaging to deliver industry-leading HBM performance and quality, providing AI memory solutions optimized for customer needs.

Image representing the integrated synergy across memory, foundry, and advanced packaging

Applications for HBM4

Explore more about HBM4

* The contents of this page are provided for informational purposes only. No representation or warranty (whether express or implied) is made by Samsung or any of its officers, advisers, agents, or employees as to the accuracy, reasonableness or completeness of the information, statements, opinions, or matters contained in this page, and they are provided on an "AS-IS" basis. Samsung will not be responsible for any damages arising out of the use of, or otherwise relating to, the contents of this page. Nothing in this page grants you any license or rights in or to information, materials, or contents provided in this document, or any other intellectual property.
* The contents of this page may also include forward-looking statements. Forward-looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or the industry in which Samsung operates may differ materially from those made or suggested by the forward-looking statements contained in this page.
* All design, features and specifications represented herein may change without notice.
* Images shown here have been adjusted for demonstration purposes and may appear differently on the actual products.
* All data on products herein, including their performances, are based on internal testing using standard Samsung benchmarks under laboratory conditions.
* Test results do not guarantee future performance under such test conditions, and the actual throughput or performance that any user will experience may vary depending upon many factors.
* For further details on product specifications, please contact the sales representative of your region.

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