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Next-gen scalable memory solution for seamless,
higher-capacity performance
Next-gen scalable memory solution for seamless,
higher-capacity performance
Next-gen scalable memory solution for seamless, higher-capacity performance

Samsung CMM-D (CXL®1 Memory Module-DRAM) is an advanced memory device that leverages CXL®'s memory-semantic protocol built on the PCIe physical layer. It seamlessly connects multiple processors and devices, increasing memory capacity. It can be easily integrated to existing data centers without requiring system modifications or server expansion. This makes it a TCO-optimized and efficient solution for data-intensive workloads.

Samsung CMM-D (CXL®1 Memory Module-DRAM) is an advanced memory device that leverages CXL®'s memory-semantic protocol built on the PCIe physical layer. It seamlessly connects multiple processors and devices, increasing memory capacity. It can be easily integrated to existing data centers without requiring system modifications or server expansion. This makes it a TCO-optimized and efficient solution for data-intensive workloads.

Samsung CMM-D (CXL®1 Memory Module-DRAM) is an advanced memory device that leverages CXL®'s memory-semantic protocol built on the PCIe physical layer. It seamlessly connects multiple processors and devices, increasing memory capacity. It can be easily integrated to existing data centers without requiring system modifications or server expansion. This makes it a TCO-optimized and efficient solution for data-intensive workloads.

1 CXL® Memory Module-DRAM

MD220 MD220 MD220

Samsung MD220 is a CXL® Memory Module built with Samsung's DRAM technology.
It allows for easy and efficient scaling of memory as needed. This maximizes performance for data-intensive workloads, and ensures it can adapt to future computing demands.
Front view of Samsung MD220 CXL DRAM memory module for high-performance computing
  • Protocol

    Protocol

    CXL 2.0

  • Interface

    Interface

    PCIe 5.0

  • Capcity

    Capcity

    up to 256GB

  • Speed

    Speed

    up to 6.4 Gbps

  • DRAM Type

    DRAM Type

    DDR5

  • Form Factor

    Form Factor

    EDSFF E3.S 2T

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All product specifications reflect internal test results and are subject to variations by the user's system configuration

All product images shown are for illustration purposes only and may not be an exact representation of the product

Samsung reserves the right to change product images and specifications at any time without notice

For further details on product specifications, please contact the sales representative of your region.

FAQs FAQs FAQs

Applications for CMM-D

* All design, features and specifications represented herein may change without notice.
* Images shown here have been adjusted for demonstration purposes and may appear differently on the actual products.
* All data on products herein, including their performances, are based on internal testing using standard Samsung benchmarks under laboratory conditions.

Test results do not guarantee future performance under such test conditions, and the actual throughput or performance that any user will experience may vary depending upon many factors.

* For further details on product specifications, please contact the sales representative of your region.

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