FinFET (Fin Field Effect Transistor)

The FinFET (Fin Field Effect Transistor) process is a 3D process adopted to overcome the limitations of conventional planar (2D) structures. The structure looks like a fish’s fin, hence the name ‘Fin’FET. In a transistor, when voltage is applied to a gate, current flows through a channel from a ‘source’ to a ‘drain’. The broader the contact area between the gate and the channel is, the greater the efficiency is. In the FinFET process, a fin-shaped 3D structure is used to increase the contact area, thereby improving semiconductor performance and reducing leakage current. Samsung Electronics has employed the FinFET process technology starting with its 14nm. In October 2016, Samsung became the first in the industry to mass produce 10nm FinFET semiconductors.