Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced the industry’s first integrated power management ICs (PMICs) — S2FPD01, S2FPD02 and S2FPC01, for the fifth-generation double data rate (DDR5) dual in-line memory module (DIMM).
One major design improvement to the newest generation DRAM solution involves integrating the PMIC into the memory module — previous generations placed the PMIC on the motherboard — offering increased compatibility and signal integrity, and providing a more reliable and sustained performance.
For improved performance efficiency and load-transient responses, Samsung’s new PMICs for DDR5 modules have been equipped with a high-efficiency hybrid gate driver and a proprietary control design (asynchronous-based dual-phase buck control scheme).
This scheme allows the DC voltage to step down from high to low with a fast transient response to changes in the output load current and adapts the conversion accordingly to efficiently regulate its output voltage at near-constant levels. The control scheme also features both pulse width and pulse frequency modulation methods, preventing delays and malfunctions when switching modes.
“With enhanced power efficiency and low output ripple voltage, the new PMICs S2FPD01, S2FPD02 and S2FPC01 allow data centers, enterprise servers and PC applications to take full advantage of their DDR5 performance for highly demanding, memory-intensive tasks,” said Harry Cho, vice president of System LSI marketing at Samsung Electronics.