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  • Boost the
    power of AI
    Boost the power of AI
    Boost the
    power of AI

    Samsung Semiconductor DRAM HBM2E Flashbolt.

Accelerating, expanding, and ensuring supercomputing and AI technology
Accelerating, expanding, and ensuring supercomputing and AI technology
Accelerating,
expanding,
and ensuring
supercompu-
ting and AI
technology

The advancement of supercomputing and AI-based technologies require the highest caliber of memory that can meet
industry needs for bandwidth, capacity, and efficiency. HBM2E Flashbolt can boost the power of AI, handle more Big Data
through its expanded capacity, and provide high-bandwidth. The advancement of supercomputing and AI-based technologies require the highest caliber of memory that can meet industry needs for bandwidth, capacity, and efficiency. HBM2E Flashbolt can boost the power of AI, handle more Big Data through its expanded capacity, and provide high-bandwidth. The advancement of supercomputing and
AI-based technologies require the highest
caliber of memory that can meet industry
needs for bandwidth, capacity, and efficiency.
HBM2E Flashbolt can boost the power of AI,
handle more Big Data through its expanded
capacity, and provide high-bandwidth.

The driving force for
high performance computing
The driving force for high performance computing
The driving
force for
high
performance
computing

Building upon the experience of leading high-end technological advancement across various industries such as AI algorithm,
data science, Autonomous driving, 5G and etc., Samsung once again establishes its pioneering role in the memory industry with
the first ever HBM2E solution.
Building upon the experience of leading high-end technological advancement across various industries such as AI algorithm, data science, Autonomous driving, 5G and etc., Samsung once again establishes its pioneering role in the memory industry with the first ever HBM2E solution.
Building upon the experience of leading
high-end technological advancement across
various industries such as AI algorithm, data
science, Autonomous driving, 5G and etc.,
Samsung once again establishes its pioneering
role in the memory industry with the first ever
HBM2E solution.
An illustrative image of Samsung HBM2E Flashbolt's fast data transfers of 3.2 Gbps per pin.

High bandwidth for the
most advanced tasks
High bandwidth for the most advanced tasks
High
bandwidth
for the most
advanced
tasks

HBM2E Flashbolt features a processing speed of 3.6 Gbps, which is approximately 1.5 times faster than the previous generation HBM.
On top of this rapid speed, HBM2E Flashbolt achieves high bandwidth through TSV technology that helps quickly process large amounts of
data, improving AI training efficiency by about 6 times the usual rate*.



*Data based on a comparison of 8 GPUs vs. 72 CPUs at cloud service
HBM2E Flashbolt features a processing speed of 3.6 Gbps, which is approximately 1.5 times faster than the previous generation HBM. On top of this rapid speed, HBM2E Flashbolt achieves high bandwidth through TSV technology that helps quickly process large amounts of data, improving AI training efficiency by about 6 times the usual rate*.

*Data based on a comparison of 8 GPUs vs. 72 CPUs at cloud service
HBM2E Flashbolt features a processing speed of
3.6 Gbps, which is approximately 1.5 times
faster than the previous generation HBM. On
top of this rapid speed, HBM2E Flashbolt
achieves high bandwidth through TSV
technology that helps quickly process large
amounts of data, improving AI training
efficiency by about 6 times the usual rate*.


*Data based on a comparison of 8 GPUs vs. 72
CPUs at cloud service
An illustrative image of 16 Gb core dies that offers twice the capacity of 8 Gb HBM solutions on the market.

Doubled capacity to
handle more data
Doubled capacity to handle more data
Doubled
capacity to
handle
more data

HBM2E Flashbolt offers about twice the capacity of the previous generation HBM solution by stacking eight layers of
10nm-class 16 Gb DRAM dies. A larger capacity allows the development of deeper neural networks that greatly improves
the speed of acquiring results for Big Data analytics.

※ Source from Samsung Datasheet (Available upon request)
HBM2E Flashbolt offers about twice the capacity of the previous generation HBM solution by stacking eight layers of 10nm-class 16 Gb DRAM dies. A larger capacity allows the development of deeper neural networks that greatly improves the speed of acquiring results for Big Data analytics.

※ Source from Samsung Datasheet (Available upon request)
HBM2E Flashbolt offers about twice the capacity
of the previous generation HBM solution by
stacking eight layers of 10nm-class 16 Gb
DRAM dies. A larger capacity allows the
development of deeper neural networks that
greatly improves the speed of acquiring results
for Big Data analytics.


※ Source from Samsung Datasheet (Available upon request)
An illustrative image of Samsung HBM2E Flashbolt against an image of servers.

Higher
performance
using less
power
Higher performance using less power
Higher
performance
using less
power

HBM2E Flashbolt boasts an approximately 18%
enhancement in power efficiency and about 1K more
power bumps compared to the previous generation
HBM solution. This ensures a more secure provision of
power that consumes less energy.

※ Source from Samsung Datasheet (Available upon request)
HBM2E Flashbolt boasts an approximately 18% enhancement in power efficiency and about 1K more power bumps compared to the previous generation HBM solution. This ensures a more secure provision of power that consumes less energy.

※ Source from Samsung Datasheet (Available upon request)
HBM2E Flashbolt boasts an approximately 18%
enhancement in power efficiency and about 1K
more power bumps compared to the previous
generation HBM solution. This ensures a more
secure provision of power that consumes less
energy.


※ Source from Samsung Datasheet (Available upon request)
An illustrative image of Samsung HBM2E Flashbolt offer higher performance using less power.

More reliable with On Die ECC
More reliable with On Die ECC
More
reliable with
On Die ECC

HBM2E Flashbolt provides high reliability and stability with On Die ECC solution. ODECC enables self-correction of internal errors
to enhance recovery of corrupted data and lower the frequency of refreshes. Single bit errors are reduced for overall
improvement of data reliability as well.
HBM2E Flashbolt provides high reliability and stability with On Die ECC solution. ODECC enables self-correction of internal errors to enhance recovery of corrupted data and lower the frequency of refreshes. Single bit errors are reduced for overall improvement of data reliability as well.
HBM2E Flashbolt provides high reliability and
tability with On Die ECC solution. ODECC
enables self-correction of internal errors to
enhance recovery of corrupted data and lower
the frequency of refreshes. Single bit errors are
reduced for overall improvement of data
reliability as well.
An illustrative image of Samsung HBM2E Flashbolt provides high reliability and stability with On Die ECC solution.
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All product specifications reflect internal test results and are subject to variations by the user's system configuration

All product images shown are for illustration purposes only and may not be an exact representation of the product

Samsung reserves the right to change product images and specifications at any time without notice

For further details on product specifications, please contact the sales representative of your region.

Applications for HBM2E Flashbolt