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Next-Generation QLC V-NAND Increases Data Center Profitability

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Samsung introduces its 7th-generation quad-level cell (QLC) vertical NAND (V-NAND) storage technology by way of the BM1743 SSD. By nearly doubling the number of layers in its stack over the previous generation, the technology sets the stage for a massive increase in bit density and a much more cost-effective solution. As if this weren’t enough, the new interface logic adds support for PCIe Gen4 and PCIe Gen5 operations.

An image of a Samsung BM1743 SSD, displaying the side view.
An image of a Samsung BM1743 SSD, displaying the side view.

What Is BM1743?

The BM1743 SSD, based on v7 QLC V-NAND technology, is the follow-on generation to the BM1733a SSD that was based on v5 QLC V-NAND. Using the same U.2 form factor as its predecessor, the new higher-density device provides a direct cost-down path for data center applications.

The increased density is achieved through advanced processing techniques that accommodate a substantially greater number of layers than the previous generation. In addition, enhancements to the device interface support not only the original PCIe Gen3 but also operation in PCIe Gen4 and PCIe Gen5 modes as well.

The overall improvements made with this generation bring a lot of benefits – meaning that not only you can store significantly more data, but you can also move the data faster, lower  the device power consumption, and realize a noteworthy improvement in reliability.

BM1743 Features and Benefits

Storage Density. Higher bit density enables a variety of larger storage capacity options. While the v5 generation supported 15.36TB, the v7 generation supports up to 61.44TB. Moreover, it has the potential to accommodate up to 122.88TB.

Performance. Within the U.2 form factor, the BM1743 device can benefit from its PCIe Gen4 interface capability to deliver exceptional performance improvements. v7 QLC NAND sequential read and write speeds are at least double, and random reads quadruple, those of v5. Moreover, the device can be offered in an E3.S form factor to take advantage of a PCIe Gen5 interface for yet another level of performance increase.


BM1743 2.5” U.2

Sequential Reads


Sequential Writes


4KB Random Reads


4KB Random Writes


Endurance, in drive writes per day (DWPD), goes to 0.26 for the new device from 0.18 for the previous generation. Power-off data retention is increased from 1 month to 3 months.


Moving to the BM1743 solution brings an effective and scalable answer to data center expense reduction and efficiency improvements.

  • Simply using the solution within an existing PCIe Gen3 environment provides an immediate cost benefit.
  • A substantial improvement in Endurance means savings over the long term.
  • Enabling PCIe Gen4 operation results in massive performance increases, making the same data center more capable for AI-centric loads and giving faster response times to cloud queries.

Moreover, the option for PCIe Gen5 means that the latest data center equipment will have an even greater performance advantage.