Using Finest Process Technology to Accelerate Data Speeds
Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, announced today that it has become the first to begin mass producing 16 gigabit (Gb) NAND flash, the highest capacity memory chip now available. The company said it will fabricate the devices in 51 nanometers (nm), the finest process technology to be used in memory mass production to date.
"In rolling out the densest NAND flash in the world, we are throwing open the gates to a much wider playing field for flash-driven consumer electronics," said Jim Elliott, director, flash marketing, Samsung Semiconductor. "To minimize production costs and improve performance, we have applied the finest process technology a ''half generation'' ahead of the industry, which is introducing 55nm and higher."
Samsung''s 51nm NAND flash chips can be produced 60 percent more efficiently than those produced with 60nm process technology. Samsung achieved this new migration milestone just eight months after announcing production of its 60nm 8Gb NAND flash last August.
The new 16Gb chip which has a multi-level cell (MLC) structure can facilitate capacity expansion by offering 16 gigabytes (GBs) of memory in a single memory card. Furthermore, by applying the new process technology, Samsung has accelerated the chip''s read and write speeds by approximately 80 percent over current MLC data processing speeds.