Making the leap to DDR5
The result is a new generation of memory chips – DDR5 – that more than doubles the performance of the previous generation (DDR4), shifting data at speeds of up to 7,200 megabits per second – helping today’s ultra-fast processors to think even faster.
Computer memory is made up of cells, each capable of storing an electrical charge. If the cell is charged, computer software interprets this as the binary state “1”. If the cell doesn’t hold a charge, computer software interprets this as the binary state of “0”. In this way, RAM uses electrical charges to store and process the millions of 1s and 0s that make up computer code.
In recent years, however, makers of computer memory chips have been bumping up against the limits of physics: for memory to function, the cells need to be insulated from one another – otherwise a charge can leak across cells, corrupting the data held in the RAM and preventing the programs that need this data from running.
To overcome these limits and make the next generation of DRAM chips not only perform better but achieve a significant performance leap, Samsung – in an industry first - successfully transferred the so-called High-K Metal Gate (HKMG) process technology known from logic chips to the densely packed memory chips. This improves the insulation between the tightly packed cells and makes it possible to move data at more than double the speed of DDR4.
The introduction of HKMG technology was possible thanks to Samsung’s industry and technology leadership. However, it was also a direct result of our close cooperation with customers, who told us that they needed memory solutions that are both faster and more efficient.