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The forefront high-bandwidth memory for
hyperscale AI training workloads
The forefront high-bandwidth memory for hyperscale AI training workloads The forefront high-bandwidth memory for hyperscale AI training workloads

Samsung HBM (High Bandwidth Memory) integrates advanced TSV-based stacking with high-throughput memory performance to accelerate AI training and HPC workloads. Designed for data-intensive and highly parallel operations, the HBM family delivers the ultra-fast, seamless data movement needed to power next-generation AI infrastructure. With its stacked architecture and wide interface, Samsung HBM improves system-level efficiency across the industry’s most complex workloads.

Samsung HBM (High Bandwidth Memory) integrates advanced TSV-based stacking with high-throughput memory performance to accelerate AI training and HPC workloads. Designed for data-intensive and highly parallel operations, the HBM family delivers the ultra-fast, seamless data movement needed to power next-generation AI infrastructure. With its stacked architecture and wide interface, Samsung HBM improves system-level efficiency across the industry’s most complex workloads.

Samsung HBM (High Bandwidth Memory) integrates advanced TSV-based stacking with high-throughput memory performance to accelerate AI training and HPC workloads. Designed for data-intensive and highly parallel operations, the HBM family delivers the ultra-fast, seamless data movement needed to power next-generation AI infrastructure. With its stacked architecture and wide interface, Samsung HBM improves system-level efficiency across the industry’s most complex workloads.

HBM4 HBM4 HBM4

Built on advanced 1c DRAM and 4nm logic base-die, HBM4 redefines system capability —

delivering up to 2.7× higher throughput and up to 40% greater power efficiency.

With 2,048 I/O pins enabling up to 3,300GB/s of bandwidth, it removes memory bottlenecks in AI accelerators and unlock new levels of compute performance.
Close-up angled view of a Samsung HBM4 memory package with a stacked structure and exposed base layer.
  • Capacity

    Capacity

    36GB

  • Speed

    Speed

    up to 13.0Gbps

  • Stack

    Stack

    12H

  • Package

    Package

    MPGA

  • Refresh

    Refresh

    32ms

  • Organization

    Organization

    2048

HBM3E HBM3E HBM3E

Designed for extreme AI workloads, Samsung HBM3E delivers up to 9.2 Gb/s per pin and up to 1,180GB/s of bandwidth per stack, powering LLMs, generative AI, and advanced inference with remarkable speed and efficiency. Trusted for demanding AI platforms, Samsung HBM3E also provides a clear evolution path toward next-generation memory innovation.
Close-up angled view of a Samsung HBM3E memory package with a stacked structure and exposed base layer.
  • Density

    Capacity

    36GB, 24GB

  • Speed

    Speed

    up to 9.2 Gbps

  • Stack

    Stack

    12H, 8H

  • Package

    Package

    MPGA

  • Refresh

    Refresh

    32ms

  • Organization

    Organization

    1024

HBM3 HBM3 HBM3

Designed for advanced AI and HPC systems, Samsung HBM3 delivers 6.4 Gb/s per pin and up to 819GB/s of bandwidth per stack, with 16GB and 24GB capacity options. Widely adopted across AI training clusters, inference systems, GPUs, and HPC accelerators, Samsung HBM3 offers an ideal balance of throughput and efficiency, establishing a proven foundation for modern AI platforms.
Samsung HBM3 memory package presented in a layered configuration highlighting stacked memory structure.
  • Density

    Capacity

    24GB, 16GB

  • Speed

    Speed

    up to 6.4 Gbps

  • Stack

    Stack

    12H, 8H

  • Package

    Package

    MPGA

  • Refresh

    Refresh

    32ms

  • Organization

    Organization

    1024

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* Test results do not guarantee future performance under such test conditions, and the actual throughput or performance that any user will experience may vary depending upon many factors.
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