スペック

  • Form Factor
    M.2
  • 容量
    250GB, 500GB, 1TB, 2TB
  • Sequential Read Speed
    Up to 7,000 MB/s
  • Sequential Write Speed
    Up to 5,100 MB/s

MORE SPECS

Model Code (Capacity)1)

  • MZ-V8P250BW (250GB)
    MZ-V8P2T0BW (2TB)

  • MZ-V8P500BW (500GB)

  • MZ-V8P1T0BW (1TB)

General Feature

  • Application

    Client PCs

  • FORM FACTOR

    M.2 (2280)

  • INTERFACE

    PCIe® Gen 4.0 x4, NVMe™ 1.3c

  • DIMENSION (WxHxD)

    80.15 x 22.15 x 2.38 (mm)

  • WEIGHT

    Max 9.0 g

  • STORAGE MEMORY

    Samsung V-NAND 3-bit MLC

  • CONTROLLER

    Samsung In-house Controller

  • CACHE MEMORY

    Samsung 512MB Low Power DDR4 SDRAM
    (250/500GB)
    Samsung 1GB Low Power DDR4 SDRAM (1TB)
    Samsung 2GB Low Power DDR4 SDRAM (2TB)

Special Feature

  • TRIM Support

    Supported

  • S.M.A.R.T Support

    Supported

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0), TCG/Opal,
    IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Not Supported

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    250GB: Up to 6,400 MB/s
    500GB: Up to 6,900 MB/s
    1TB: Up to 7,000 MB/s
    2TB: Up to 7,000 MB/s

  • SEQUENTIAL WRITE

    250GB: Up to 2,700 MB/s
    500GB: Up to 5,000 MB/s
    1TB: Up to 5,000 MB/s
    2TB: Up to 5,100 MB/s

  • RANDOM READ (4KB, QD32)

    250GB: Up to 500,000 IOPS
    500GB: Up to 800,000 IOPS
    1TB: Up to 1,000,000 IOPS
    2TB: Up to 1,000,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    250GB: Up to 600,000 IOPS
    500GB: Up to 1,000,000 IOPS
    1TB: Up to 1,000,000 IOPS
    2TB: Up to 1,000,000 IOPS

  • RANDOM READ (4KB, QD1)

    250GB: Up to 22,000 IOPS
    500GB: Up to 22,000 IOPS
    1TB: Up to 22,000 IOPS
    2TB: Up to 22,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    250GB: Up to 60,000 IOPS
    500GB: Up to 60,000 IOPS
    1TB: Up to 60,000 IOPS
    2TB: Up to 60,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (System Level)3)

    250GB: Average 5 W Maximum 7 W
    512GB: Average 5.9 W Maximum 7.4 W
    1TB: Average 6.2 W Maximum 8.9 W
    2TB: Average 6.1 W Maximum 7.2 W
    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 35 mW

  • POWER CONSUMPTION (DEVICE SLEEP)

    Max. 5 mW

  • ALLOWABLE VOLTAGE

    3.3 V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 - 70 ℃

  • Shock

    1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT

    Not Available

Software

Warranty4)

  • MZ-V8P250BW (250GB)

    5-year or 150 TBW limited warranty

  • MZ-V8P500BW (500GB)

    5-year or 300 TBW limited warranty

  • MZ-V8P1T0BW (1TB)

    5-year or 600 TBW limited warranty

  • MZ-V8P2T0BW (2TB)

    5-year or 1200 TBW limited warranty

  • 1)Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • 2)Performance may vary based on system hardware & configuration
  • 3)Actual power consumption may vary depending on system hardware & configuration
  • 4)Samsung Electronics shall not be liable for any loss, including but not limited to loss of data or other information contained in Samsung Electronics products and in storage devices, or loss of profit or revenue which may be incurred by user. For more information on the warranty, please visit https://semiconductor.samsung.com/jp/consumer-storage/support/warranty