Specifications

  • Form Factor
    M.2
  • Capacity
    1TB, 2TB, 4TB
  • Sequential Read Speed
    Up to 7,450 MB/s
  • Sequential Write Speed
    Up to 6,900 MB/s

MORE SPECS

Model Code (Capacity)1)

  • MZ-V9P1T0BW(1TB)
    MZ-V9P2T0BW(2TB)

  • MZ-V9P4T0CW(4TB)
    MZ-V9P4T0GW(4TB)

General Feature

  • Application

    Client PCs, Game Consoles

  • FORM FACTOR

    M.2 (2280)

  • INTERFACE

    PCIe Gen 4.0 x4, NVMe 2.0

  • DIMENSION (WxHxD)

    80.15 x 25 x 8.88mm (with heatsink)

  • WEIGHT

    Max 28.0g Weight

  • STORAGE MEMORY

    Samsung V-NAND 3-bit TLC

  • CONTROLLER

    Samsung in-house Controller

  • CACHE MEMORY

    Samsung 1GB Low Power DDR4 SDRAM (1TB)
    Samsung 2GB Low Power DDR4 SDRAM(2TB)
    Samsung 4GB Low Power DDR4 SDRAM (4TB)

Special Feature

  • TRIM Support

    Supported

  • S.M.A.R.T Support

    Supported

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0) TCG/Opal
    IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Not supported

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    1TB: Up to 7,450 MB/s
    2TB: Up to 7,450 MB/s
    4TB: Up to 7,450 MB/s

  • SEQUENTIAL WRITE

    1TB: Up to 6,900 MB/s
    2TB: Up to 6,900 MB/s
    4TB: Up to 6,900 MB/s

  • RANDOM READ (4KB, QD32)

    1TB: Up to 1,200,000 IOPS
    2TB: Up to 1,400,000 IOPS
    4TB: Up to 1,600,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    1TB: Up to 1,550,000 IOPS
    2TB: Up to 1,550,000 IOPS
    4TB: Up to 1,550,000 IOPS

  • RANDOM READ (4KB, QD1)

    1TB: Up to 22,000 IOPS
    2TB: Up to 22,000 IOPS
    4TB: Up to 22,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    1TB: Up to 80,000 IOPS
    2TB: Up to 80,000 IOPS
    4TB: Up to 80,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (System Level)3)

    1TB: Average 5.4 W Maximum 7.8 W (Burst mode)
    2TB: Average 5.5 W Maximum 8.5 W (Burst mode)
    4TB: Average 6.5 W Maximum 8.6 W (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    1TB: Max. 50 mW
    2TB: Max. 55 mW
    4TB: Max. 55 mW

  • POWER CONSUMPTION (DEVICE SLEEP)

    1TB: Max. 5mW
    2TB: Max. 5mW
    4TB: Max. 5.8mW

  • ALLOWABLE VOLTAGE

    3.3 V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability (MTBF)

  • OPERATING TEMPERATURE

    0 - 70 ℃ Operating Temperature

  • Shock

    1,500 G & 0.5 ms (Half sine)

Accessories

  • INSTALLATION KIT

    Not Available

Software

Warranty4)

  • MZ-V9P1T0CW (1TB)

    5-year or 600 TBW limited warranty

  • MZ-V9P2T0CW (2TB)

    5-year or 1200 TBW limited warranty

  • MZ-V9P4T0CW, MZ-V9P4T0GW (4TB)

    5-year or 2400 TBW limited warranty

  • 1)Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
  • 2)Performance may vary based on system hardware & configuration
  • 3)Actual power consumption may vary depending on system hardware & configuration
  • 4)Samsung Electronics shall not be liable for any loss, including but not limited to loss of data or other information contained in Samsung Electronics products and in storage devices, or loss of profit or revenue which may be incurred by user. For more information on the warranty, please visit https://semiconductor.samsung.com/consumer-storage/support/warranty