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Advanced Heterogeneous Integration

New dimensions
to power a new era

Samsung’s advanced heterogeneous chip packages empower today’s device manufacturers to pursue tomorrow’s breakthroughs. With bleeding-edge 2.5D and 3D variations, Samsung combines chips, process nodes, and cutting edge tech to open all new possibilities.

Breakthroughs in AI, 5G, autonomous vehicles and Metaverse tech promise to reshape the way we live – but delivering the function and performance needed to power those advancements on a single chip is becoming more complex, and less cost effective.
Samsung’s Advanced Heterogeneous Integration (HIT) brings chips, process nodes, and bleeding edge technologies together in one unified package – increasing density and combining powerful functions, all while bringing down costs.
In a future powered by HBM and advanced computing, AHI is empowering device manufacturers to explore new technologies that push the limits of performance in their products. See below to learn more about Samsung’s I-CUBE, H-CUBE and X-CUBE solutions.

I-CUBE 2.5D Package

2.5D packages deploy parallel horizontal chip placement to combat heat build-up and expand on performance.
Samsung’s Through Silicon Via (TSV) and Backend-of-the-line (BEOL) technologies form a bedrock for two or more chips to harmonize their specialized functions, becoming more than the sum of their parts to deliver powerful solutions for modern devices.

Samsung Foundry's I-CUBE S brings impressive bandwidth and stunning performance capabilities at the table with emphatic warpage control, even with large interposers.
I-Cube S
  • The I-CUBE S brings impressive bandwidth and stunning performance capabilities to the table with emphatic warpage control, even with large interposers. Ultra-low memory loss is paired with high memory density, while thermal efficiency control is steeply improved.
    Also, I-CUBE S is a heterogeneous technology that horizontally places a logic chip and a couple of HBM dies on top of a silicon interposer, realize strong computing power, high-bandwidth data transmission, and low latency.
Samsung Foundry's I-Cube E has an Si embedded structure that covers both Si bridges' benefits.
I-Cube E
  • The I-Cube E has Si embedded structure which covers advantages of both Si bridge by fine patterning and RDL interposer with TSV-less structure and large interposer size by applying PLP.
Samsung Foundry's H-Cube is the hybrid substrate-applied structure that allows large size in the I-Cube 2.5D packaging.
  • H-Cube is the hybrid substrate-applied structure and it is the combination of fine patterning ABF(Ajinomoto Build-up Film) substrate and HDI(High Density Interconnection) substrate which allows large size into I-Cube 2.5D packaging.

X-Cube 3D IC

3D IC packages save massive amounts of on-chip real estate by stacking components vertically, reducing surface area and bumping performance by shortening the space between chips. By dramatically reducing the risks from big die construction, they keep costs low while retaining high bandwidth and low power performance.

Samsung Foundry's X-Cube (u-Bump) stacking logic is integrated on the Z-axis, increasing dynamic bonding capabilities.
X-Cube (u-Bump)
  • The X-CUBE is a leap forward in advanced packaging, stacking logic dies on the Z-axis and increasing dynamic bonding capabilities. Those innovations have galvanized Samsung to fast track its superior Chip-on-Wafer and Hybrid Copper Bonding tech – elevating the X-CUBE beyond speed or performance dips with even more chips per stack.
Samsung Foundry's X-Cube (Hybrid Copper Bonding) has many advantages from the viewpoint of layout flexibility compared with the conventional.
X-Cube (Hybrid Copper Bonding)
  • HCB (Hybrid Copper Bonding): The hybrid Cu-Cu connections have a lot of advantages from the view-point of layout flexibility compared with the conventional chip stacking technologies. Samsung Foundry is in progress of developing the ultra-fine pitch Cu-Cu connections such as less than 4um.