MRAM is a type of memory semiconductor which is as fast as DRAM while being able to maintain data when power is removed, just like the NAND flash. Samsung Electronics’ DS Division, leading the world’s DRAM market since 1992, launched the industry’s first 28nm FD-SOI (Fully Depleted-Silicon on Insulator) process eMRAM (embedded Magnetic Random Access Memory) solutions on March 6.
※ MRAM (Magnetic Random Access Memory): A type of non-volatile memory that uses magnetic domains, characterized by writing speeds around 1,000 times faster than flash memory and low power consumption.
We interviewed the people behind this next-generation memory technology: Just what is MRAM, and what sets MRAM apart from DRAM?
Samsung Electronics’ industry-leading memory technology leadership: From DRAM to MRAM
We sat down with Kim Chankyung from the Foundry Business Division to discuss Samsung Electronics’ 25-year DRAM dominance and current progress in next-generation MRAM technology. Kim was formerly involved in DRAM memory design, and currently researches next-generation MRAM designs for the Foundry Business Division.