SOI, The Disruptive Innovation Samsung Foundry is Leading to Overcome the Limits

About Silicon on Insulator (SOI) technology Semiconductors have evolved to meet the world's need for speed, performance and efficiency. In this article, we will discuss Silicon on Insulator (SOI) technology, which enables the improved performance of semiconductor devices and overcomes the limits related to the reduction of power consumption. What is SOI?

SOI substrates are made by bonding two wafers together. They consist of monocrystalline silicon for a substrate, a buried dielectric layer (BOX) for insulation and monocrystalline silicon for a channel. In terms of structure, an oxide layer is inserted between both layers of silicon.

As shown in the diagram, SOI MOSFET is used to make a transistor on top of monocrystalline silicon for the channels of the structure mentioned above. Transistors using SOI substrates have the advantage of structurally blocking leakage current thanks to having a BOX placed below them. In addition, since the capacitance generated among the Source, Drain and Body does not occur with the BOX, the total capacitance can be reduced, contributing to a reduction of malfunctions caused by alpha particles, resulting in a lowering of the SER (Soft Error Rate). _{*Soft Error Rate: The percentage of malfunctions in a semiconductor chip caused by extremely small amounts of radioactive material contained in the internal components of the chip.} SOI technology is gaining attention as a technology that can help to make high-performance, low-power ICs (Integrated Circuits) by overcoming existing limitations. In the following article, we will cover detailed information regarding the two processes utilizing SOI technology, PDSOI and FDSOI.