Samsung Foundry’s Advanced Heterogeneous Integration solutions empower today’s customers to pursue tomorrow’s breakthroughs. Through advanced memory and advanced process node technology that Samsung provides, chiplet and advanced packaging customers are able to enjoy seamless integration of bleeding-edge memory, 2.5D and 3D package variations and die-to-die interfaces.
Breakthroughs in AI, 5G, autonomous vehicles and Metaverse tech promise to reshape the way we live. But delivering the function and performance needed to power those advancements on a single chip is becoming more complex and less cost effective.
Samsung Foundry’s advanced Heterogeneous Integration Technology (HIT) brings chips, process nodes, and bleeding edge technologies together in one unified package—increasing density and combining powerful functions, all while bringing down costs.
In a future powered by HBM and advanced computing, HIT is empowering device manufacturers to explore new technologies that push the limits of performance in their products.
See below to learn more about Samsung’s I-Cube™ and X-Cube™ solutions.
I-Cube™ deploys parallel horizontal chip placement to boost performance while combating heat build-up. Samsung’s Through Silicon Via ( TSV ) and Backend-of-the-line ( BEOL ) technologies form a foundation for two or more chips to harmonize their specialized functions, becoming more than the sum of their parts to deliver powerful solutions for modern devices.
I-Cube™ is available in I-CubeS™ and I-CubeE™ derivatives based on the interposer type.
3D IC packages boost performance even further by using much shorter interconnect wire lengths by stacking components vertically, enabling ultra-high vertical interconnect density with lower parasitics while saving massive amounts of on-chip real estate. 3D IC: X-Cube™ technology dramatically reduces yield risks from large monolithic dies, with 3D Integration that enables high system performance with lower cost while retaining high bandwidth and low power.