A. Efficient structure of Samsung’s GAA As shown in Fig. , GAAs are structurally divided into two types, the wire type, and the sheet type. For the nano-wire GAA, a larger number of wire layers had to be piled up to increase the total channel width, and this made the process even more complicated. To overcome this problem, we adopted GAA, MBCFET™ in a sheet-type structure with a greater width, rather than wire.
i. Lower voltage and greater efficiency! Low operation voltage and high current efficiency Power (power consumption) is calculated by multiplying the transistor-applied voltage with the current flowing. The voltage required for transistor operation is called Operating Voltage. We have been making continuous efforts to increase power efficiency by lowering the operating voltage. The concept is similar to how a switch that can turn on a light using a smaller amount of power is more efficient. For MBCFET™, we improved the on-off characteristic (on and off control ability) through a structural change to make all four sides a channel. As with the case of a faucet with improved functionality turning off water using only a small amount of power, the improvement of the on-off characteristic enabled transistors to properly operate even at low voltage. As a result, the operating voltage was lowered, which brought higher power efficiency.
ii. As you want it! High flexibility We need to make transistors with different amounts of current flowing according to design. To adjust the amount of current, the channel width needs to be either increased or decreased. With FinFET structure, the height of the fin that is surrounded by the gate cannot be adjusted. Therefore, to increase the overall channel width, we used a method to increase the number of fins in the horizontal direction. This method, however, only enabled adjustment of the discontinuous channel width. This is because, when the channel width of a fin surrounded by the gate is α, the width can be decreased or increased only in the multiples of α. Unlike FinFET height, MBCFET™ allows continuous adjustment of the channel width as in Fig.  by controlling sheet width.