Samsung Z-SSD™ offers a new level of storage for today’s in-memory databases, artificial intelligence (AI) workloads, high-performance computing (HPC) workloads, and Internet of Things (IoT) analytics. The Z-SSD simultaneously combines extremely low latency, state-of-the-art performance, and ultimate reliability into a single, ready-to-install storage device ideal for enterprise storage applications.
Enabling faster access and response, Z-SSD provides 5 times lower latency at 20 microseconds, compared to today's leading NVMe™ SSDs*.
The latest storage server with Z-SSD to see its latency reduced significantly, delivering a tangible performance acceleration.
*Compared to PM963 NVMe™ SSD
The single-port, 4-lane Z-SSD features Z-NAND chips with a cell read speed 10x faster than ordinary NAND1) chips. With the maximized data bandwidth available through PCIe®
interface, 1.5GB LPDDR4 DRAM and a high performance controller, the Z-SSD performs 1.7 times faster2) in random read at 750K IOPS.
1) TLC NAND 2) Compared to PM963 NVMe™ SSD
Z-SSD guarantees up to 30 drive writes per day (DWPD) for 5 years, or a total of 42PB* at 800GB capacity. That translates into a total of 8.4 million 5GB full-HD movies during a 5-year
period. This level of reliability provides an assurance for mission-critical situations where the highest accuracy in workload is demanded.
*1 PB (PetaByte) = 1,024 TB (TeraByte)
Z-SSD is a new tier of storage with the highest throughput and the lowest latency on the market today. This gives enterprise architects a compelling reason to consider Z-SSD when optimizing workloads involving applications in areas such as cloud DBMS, memcache, in-memory and real time analytics.
* All product specifications reflect internal test results and are subject to variations by user’s system configuration.
* All product images shown are for illustration purposes only and may not be an exact representation of the product.
* Samsung reserves the right to change product images and specifications at any time without notice.